电子特气 六氯乙硅烷测定DC-550填充柱

电子特气 六氯乙硅烷测定DC-550填充柱

电子特气 六氯乙硅烷测定DC-550填充柱 详细信息：

名称：DC-550不锈钢填充柱
规格：3m*Φ3
*高使用温度：240°C
货号：20231119001
应用：YS/T 1434-2021六氯乙硅烷组分含量的测定 气相色谱法
GB/T 42720-2023电子特气 六氯乙硅烷

含硅膜用于半导体工业中的多种应用。含硅膜包括诸如多晶硅(poly-Si)和外延硅、硅锗(SiGe)、碳化硅锗(SiGeC)、碳化硅(SiC)和氮化硅(SiN)之类的硅膜。随着电路的几何形状收缩到更小的特征尺寸，希望获得更低的沉积温度，这是例如由于半导体器件中新材料的引入，以及源极和漏极区域中浅注入的热预算的减少引起的。此外，很显然，在未来的器件中需要含硅膜的非选择性(均厚)和选择性沉积。例如，半导体制造对外延硅膜的厚度和电阻率有严格的规格限制。外延硅沉积可以是工艺流程中的第yi步，其中块硅的晶格通过新的含硅层的生长被延伸，这种新的含硅层与块硅具有不同的掺杂水平。匹配目标外延膜的厚度和电阻率参数对于后续适当功能器件的制作是很重要的。

浩瀚色谱（山东）应用技术开发有限公司，研发气相色谱法测定电子特气 六氯乙硅烷的含量，面积归一法定量，结果满意。

电子特气 六氯乙硅烷测定DC-550填充柱  测试谱图：

Determination of DC-550 packed column using electronic special gas hexachloroethylene silane

Detailed information of DC-550 packed column for the determination of electronic special gas hexachloroethylene silane:

Name: DC-550 stainless steel filled column

Specification: 3m* Φ three

*High operating temperature: 240 ° C

Article number: 20231119001

Application: YS/T 1434-2021 Determination of Hexachloroethane Component Content Gas Chromatography

GB/T 42720-2023 Electronic Special Gas Hexachloroethane

Silicon containing films are used in various applications in the semiconductor industry. Silicon containing films include silicon films such as polycrystalline silicon (poly Si) and epitaxial silicon, silicon germanium (SiGe), silicon carbide germanium (SiGeC), silicon carbide (SiC), and silicon nitride (SiN). As the geometric shape of the circuit shrinks to smaller feature sizes, it is hoped to achieve lower deposition temperatures, for example due to the introduction of new materials in semiconductor devices and the reduction of shallow injection heat budget in the source and drain regions. Furthermore, it is evident that non-selective (uniform thickness) and selective deposition of silicon containing films are required in future devices. For example, semiconductor manufacturing has strict specifications for the thickness and resistivity of external silicon films. Epitaxial silicon deposition can be the first step in the process, where the lattice of block silicon is xtended by the growth of new silicon containing layers with different doping levels compared to block silicon. Matching the thickness and resistivity parameters of the target epitaxial film is crucial for the subsequent production of appropriate functional devices.

Haohan Chromatography (Shandong) Application Technology Development Co., Ltd. has developed a gas chromatography method to determine the content of electronic special gas hexachloroethane, and the area normalization method has been used for quantification, with satisfactory results.

Electronic special gas hexachloroethylene silane determination DC-550 packed column test spectrum: